TE7-4: Power Devices and applications: Si, SiC, and GaN devices--Ⅱ（腾讯会议） (线上)
401
会议主题：TE7-4: Power Devices and applications: Si, SiC, and GaN devices--Ⅱ会议时间：2022-11-07 8:00-10:00 (GMT+08:00) 中国标准时间 - 北京
点击链接入会，或添加至会议列表：
https://meeting.tencent.com/dm/8q788Q3XKWdC#腾讯会议：773-525-020
Session Chairs：
Lei Ming Hebei University of Technology
Zhen Xin Hebei University of Technology
08:00-08:20
TE7.4.1 Current Uniformity Optimization of Multi-Chip SiC Module for High-Power Applications
08:20-08:40
TE7.4.2 A Novel Electric Field Coupling Differential Probe with Low Intrusion
08:40-09:00
TE7.4.3 A Fast and Accurate Spice Circuit Simulation Modeling Method of GaN HEMT
09:00-09:20
TE7.4.4 Research on Fast Design Method for Power Module Terminal RMS Current Capacity via Thermal Equivalent Model
09:20-09:40
TE7.4.5 Voltage-Balanced Behavioral Model Considering Carrier Extraction Effect for Series-Connected Trench Gate FS-IGBTs
09:40-10:00
TE7.4.6 Quasi-constant Current Control Method of Resonant Gate Driver for Switching speed Adjustment
