TE7-16: Power Devices and applications: Si, SiC, and GaN devices--Ⅲ（腾讯会议） (二层 202)
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会议主题：TE7-16: Power Devices and applications: Si, SiC, and GaN devices--Ⅲ会议时间：2022-11-07 13:00-15:00 (GMT+08:00) 中国标准时间 - 北京
点击链接入会，或添加至会议列表：
https://meeting.tencent.com/dm/ub6fa8RmY7eD#腾讯会议：649-879-767
Session Chairs：
Lei Ming Hebei University of Technology
Shanshan Gao Harbin Institute of Technology
13:00-13:20
TE7.16.1 Modeling and Assessment of Thermal Impedance Considering Layout and Parameter Dispersion for Multichip SiC Power Module
13:20-13:40
TE7.16.2 IGBT Long-Term Forward Bias Safe Operating Area Calibration Considering Aging-Caused Shrinkage
13:40-14:00
TE7.16.3 Investigations on the Degradation of Different Gate Oxide Regions of SiC MOSFET Under Different Repetitive DC Bus Voltage
14:00-14:20
TE7.16.4 Modeling and Stability Analysis for a Closed Loop Active IGBT Gate Drive
14:20-14:40
TE7.16.5 Trajectory-Model-Based Switching Waveform Restoration Method for Accurate Dynamic Characterization of SiC Power MOSFET
14:40-15:00
TE7.16.6 Stability Analysis and Parameters Design of DC Microgrid Based on SOC Droop Control
